FLEXIBLE NONVOLATILE RESISTIVE MEMORY BASED ON NIOBIUM OXIDES NB2O5

Kundozerova T.V, Cheremisin A.B, Putrolainen V.V

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The article presents a results of development and experimental research of ReRAM (resistive random access memory) elements based on unipolar resistive switching effect. Flexible nonvolatile resistive random access memory elements based on niobium oxide were fabricated by low temperature process of anodic oxidation, the thicknesses of oxide films was about 75 nanometers and was controlled by anodizing voltages. Polyimide films Kapton was used as a flexible substrate for investigated samples. The effect of unipolar resistive switching was achieved by applying pulses of voltages or current on a top electrodes. Set voltages (switching to low resistance state) Us = 1 - 1.5 V, reset voltages (switching to high resistance state) Ures = 0.2 - 0.5 V. Parameters of resistive switching didn’t degrade after 100000 mechanical bends. Thus obtained structures can be used as a memory elements for devices of flexible electronics.

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Кундозерова Т.В, Черемисин А.Б, Путролайнен В.В ГИБКАЯ ЭНЕРГОНЕЗАВИСИМАЯ РЕЗИСТИВНАЯ ПАМЯТЬ НА ОСНОВЕ ОКСИДА НИОБИЯ Nb2O5 // Научное обозрение. Физико-математические науки . 2020. № 1. С. 36-36;
URL: https://physics-mathematics.ru/en/article/view?id=42 (дата обращения: 24.06.2026).