SYNTHESIS OF FEW-LAYER GRAPHENE BY CHEMICAL VAPOR DEPOSITION ON COPPER FOIL

Kostogrud Y.A, Zamchiy A.O, Baranov E.A, Kalyugniy N.A, Smovzh D.V

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Graphene was synthesized by chemical vapor deposition at atmospheric pressure on copper substrates. Methane gas was used as carbon source, as substrates used copper foil thickness of 30 microns. The experiments were performed at different temperatures (970–1010 °C), gas mixture (Ar / He + H2 + CH4), exposure times (5-30 min.), cooling rates of the samples. The synthesized films were analyzed with Raman spectroscopy (RS). It was found that the cooling parameters significantly affect the resulting films. It is shown that the synthesis with a low concentration of methane (~ 1 % ) are obtained by the least defective graphene films. In the experiments were synthesized few-layer graphene. Least layers ( 2-5) were observed at a reactor temperature 1000 °C, the gas mixture (Ar: H2: CH4 = 100:3:10 sccm), exposure time 30 min and rapid cooling. The best quality Graphene structures (the ratio D / G lines ) were observed at a reactor temperature 980 ° C, the gas mixture (Ar/Н2/CH4 = 100/5/1 sccm ), exposure time 30 minutes and fast cooling in the same gas mixture.

Библиографическая ссылка

Костогруд И.А, Замчий А.О, Баранов Е.А, Калюжный Н.А, Смовж Д.В СИНТЕЗ МНОГОСЛОЙНОГО ГРАФЕНА МЕТОДОМ ГАЗОФАЗНОГО ОСАЖДЕНИЯ НА МЕДИ // Научное обозрение. Физико-математические науки . 2020. № 1. С. 54-55;
URL: https://physics-mathematics.ru/en/article/view?id=76 (дата обращения: 24.06.2026).